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NSF In-Memory DRAM Computing IoT Data Application Grant
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NSF Grant for Searchable Memory

Green Mountain Semiconductor receives NSF grant to develop next-generation In-Memory.

Green Mountain Semiconductor today received a Phase I NSF SBIR grant to support development of its breakthrough Ultra-High-Speed In-Memory Searchable DRAM project. The effort focuses on creating the next-generation computing technology to improve the performance of data centers to accomodate the trends of big data applications and the internet of things.