NSF Grant for Searchable Memory
- July 01, 2016
- Green Mountain Semiconductor, Inc.
- 0.5 Minute Read
Green Mountain Semiconductor receives NSF grant to develop next-generation In-Memory.
Green Mountain Semiconductor today received a Phase I NSF SBIR grant to support development of its breakthrough Ultra-High-Speed In-Memory Searchable DRAM project. The effort focuses on creating the next-generation computing technology to improve the performance of data centers to accomodate the trends of big data applications and the internet of things.